Rebecca J. “Becky” Nikolic is the Division Leader for the National Security Engineering Division (NSED) at Lawrence Livermore National Laboratory, a role she assumed in January 2025. She began her LLNL career in Engineering and has since held a range of technical and leadership positions spanning national security, advanced technology development, and institutional strategy.

Prior to returning to Engineering, Becky served as Director of Institutional S&T Assessments, where she oversaw the Institutional Assessment Program. She also held several leadership roles in the Global Security Directorate, including Deputy Program Manager for Energy and Homeland Security, LDRD point-of-contact for Global Security, and Associate Program Leader for Nuclear Threat Diagnostics R&D. Earlier in her career, as a Group Leader of the MEMS, Electronics and Photonics Group, within LLNL’s Center for Micro and Nano Technology, where she led teams advancing innovative detection and semiconductor technologies for national security applications.

Becky’s expertise includes radiation detectors, microtechnology, compound semiconductors, optoelectronics, and electronics. Over the course of her career, she has received 20 awards and fellowships and authored or coauthored more than 75 publications. She is a former elected member of the IEEE Electron Device Society Administrative Committee and has been recognized with an R&D 100 Award, the DOE Oppenheimer Fellowship, a fellowship at the Scowcroft Institute at Texas A&M University for National Security Affairs, and the LLNL Early and Mid-Career Award. She earned her Ph.D. in Electrical Engineering, specializing in Applied Physics, her M.S. in Electrical Engineering from the University of California, San Diego, and her B.S. in Electrical Engineering from the University of California, Davis.

Ph.D. Electrical Engineering, University of California, San Diego, San Diego, CA

M.S. Electrical Engineering, University of California, San Diego, San Diego, CA

B.S. Electrical Engineering, University of California, Davis, Davis, CA

1.       J. W. Murphy, C. D. Frye, R. A. Henderson, M. A. Stoyer, L. F. Voss, and R. J. Nikolic, Demonstration of a Three-dimensionally Structured Betavoltaic. Journal of Electronic Materials, 2021, 50, 1380-1385.

2.       C.D Frye, Q. Shao, J. W. Murphy, S. E. Harrison, L. F. Voss, J. H. Edgar, and R. J. Nikolic, α Irradiation Response on the Electronic Transport Properties of p-B12P2. Journal of Electronic Materials, 2021, 50(1), 75-79.

3.       C. D. Frye, J. W. Murphy, Q. Shao, L. F. Voss, S. E. Harrison, J. H. Edgar, R. J. Nikolic, Hall Effect Characterization of α-irradiated p-type 4H-SiC. Physica status solidi (b), 2020, 1900781.

4.       J. W. Murphy, L. F. Voss, C. D. Frye, Q. Shao, K. Kazkaz, M. A. Stoyer, R. A. Henderson, and R. J. Nikolic, Design considerations for three-dimensional betavoltaics. AIP Advances, 2019, 9(6), 065208.

5.       L. F. Voss, J. W. Murphy, Q. Shao, R. A. Henderson, C. D. Frye, M. A. Stoyer, and R. J. Nikolic, Selenium-iodide: A low melting point eutectic semiconductor. Applied Physics Letters, 2018, 113(24), 242103.

6.       Q. Shao, L. F. Voss, J. W. Murphy, C. D. Frye, R. A. Henderson, M. A. Stoyer, D. Qu, R. J. Nikolic. Accelerated Aging in 4H-SiC as a Betavoltaic Semiconductor Using an Electron Beam System. IEEE Nuclear Science Symposium and Medical Imaging Conference (Atlanta, GA), 2017.

7.       J. W. Murphy, Q. Shao, L. F. Voss, P. L. Kerr, L. Fabris, A. M. Conway, R. J. Nikolic, Pillar-structured Neutron Detector Based Multiplicity System. Nuclear Instruments and Methods in Physics Research A: Accelerators, Spectrometers, Detectors, and Associated Equipment, 2018, 877, 355-358.

8.       A. M. Conway, E. L. Swanberg, L. F. Voss, R. T. Graff, A. J. Nelson, R. J. Nikolic, S. A Payne, H. Kim, L.

Cirignano, K. Shah, “Longevity of planar and pixelated TlBr Gamma Spectrometers,” Symposium on Radiation Measurements and Applications Ann Arbor, MI, United States June 9-12, 2014.

9.       A. J. Nelson, E. L. Swanberg, L. F. Voss, R. T. Graff, A.M. Conway, R. J. Nikolic, S. A. Payne, H. Kim, L.

Cirignano, K. Shah, “Oxidation/Reduction Reactions at the Metal Contact-TlBr Interface: An X-ray Photoelectron Spectroscopy Study,” SPIE Optics & Photonics, San Diego, CA, August 17-21, 2014.

10.    A. M. Conway, A. J. Nelson, L. F. Voss, E. L. Swanberg, P. R. Beck, R. T. Graff, R. J. Nikolic, S. A. Payne, H. Kim, L. Cirignano, K. Shah, “Chloride surface incorporation into pixelated TlBr Gamma Spectrometers,”

Nuclear Science Symposium, Seattle, WA, September 8-15, 2014.

11.    A.J. Nelson, L.F. Voss, P.R. Beck, et al., “X-ray photoemission analysis of chemically modified TlBr surfaces for improved radiation detectors,” Journal of Applied Physics, vol. 113,   issue 14,   p. 143713 (4 pp.),  14 April 2013.

12.    A.M. Conway, L.F. Voss, A.J. Nelson, “Fabrication Methodology of Enhanced Stability Room Temperature TlBr Gamma Detectors,” IEEE Transactions on Nuclear Science,  vol. 60,   issue 2,   pp. 1231-6, April 2013.

13.    L.F. Voss, A.M. Conway, A.J. Nelson et al., “Current reduction of CdZnTe via band gap engineering,” IEEE Transactions on Nuclear Science, vol. 60,   issue 2, pp. 1208-12, April 2013.

14.    Q. Shao, L.F. Voss, A.M. Conway et al., “High aspect ratio composite structures with 48.5% thermal neutron detection efficiency,” Applied Physics Letters,  vol. 102,   issue 6,   p. 063505 (4 pp.),  11 Feb. 2013.

15.    Q. Shao, R.P. Radev, A.M. Conway et al., “Gamma discrimination in pillar structured thermal neutron detectors,” Proceedings of the SPIE - The International Society for Optical Engineering, Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XIII Location: Baltimore, MD,  83581N (9 pp.), 24-27 April 2012.

16.    R.J. Nikolic et al, Invited, Si Pillar Structured Thermal Neutron Detectors: Fabrication Challenges and Performance Expectations, SPIE Security and Defense Conference, Orlando, FL, Apr 25-29, 2011.

17.    R.J. Nikolic, A.M. Conway, R.Radev,  Q. Shao, L.F. Voss, T.F. Wang, et al., Invited, “Nine Element Si-based Pillar Structured Thermal Neutron Detector,”  Proceedings of the SPIE - The International Society for Optical Engineering Volume: 7805  Pages: 78050O (9 pp.)  San Diego, CA, USA, Aug 1-5 , 2010.

18.    Q. Shao, A. M. Conway, R.Radev, L. F. Voss, T. F. Wang, C. L. Cheung, L. Fabris and R. J. Nikolic, “Pillar structured thermal neutron detectors: Effect of radiation fluence,” INMM, Baltimore MD, July 11-15, 2010.

19.    L.F. Voss, P.R.  Beck, A.M. Conway, R.T. Graff, R.J. Nikolic, A.J. Nelson, and S.A. Payne,  “Surface current reduction in (211) oriented Cd0.46Zn0.04Te.50 crystals by Ar bombardment,” Journal of Applied Physics, vol. 108,  issue 1, pp  Pages: 014510 (3 pp.), 2010.  

20.    L.F. Voss, P.R. Beck, A.M. Conway et al., “Surface current reduction in (211) oriented Cd 0.46Zn 0.04Te .50 crystals by Ar bombardment,” Journal of Applied Physics,  vol. 108, issue 1,   pp. 014510 (3 pp.), 1 July 2010.

21.    A.J. Nelson, T. A. Laurence, A.M. Conway, E.M. Behymer, B.W. Sturm, L.F. Voss, R.J. Nikolic, S.A. Payne, A. Mertiri, G. Pabst, K.C. Mandal, and A. Burger “Spectroscopic investigation of (NH4)2S treated GaSeTe for radiation detector applications”, Materials Lett. 64(3), 393, 2010.

22.    A.J. Nelson, A.M. Conway, B.W. Sturm, E.M. Behymer, C.E. Reinhardt, R.J. Nikolic, S.A. Payne, G. Pabst, and K.C. Mandal, “X-ray photoemission analysis of chemically treated GaTe semiconductor surfaces for radiation detector applications,” J. Appl. Phys. 106(2), 023717, 2009.

23.    A.M. Conway, L.F. Voss, P.R. Beck, B.W. Sturm, R.T. Graff, A.J. Nelson, R.J. Nikolic and S.A. Payne, “Amorphous semiconductor blocking contacts on CdZnTe gamma detectors,” International Semiconductor Device Research Symposium ISDRS,   Dec. 9-11 December 2009, College Park, MD, USA.

24.    Q. Shao, A.M. Conway, L.F. Voss, D.P. Heineck, R.T. Graff, C.E. Reinhardt, R.J. Nikolic, “Leakage Current Quenching and Lifetime Enhancement in 3D Pillar Structured Silicon PIN Diodes,” International Semiconductor Device Research Symposium ISDRS,   Dec. 9-11 December 2009, College Park, MD, USA.

25.    A.J. Nelson, A.M. Conway, C.E. Reinhardt, J.L. Ferreira, R.J. Nikolic and S.A. Payne, “X-Ray Photoemission Analysis of Passivated CdZnTe Surfaces for Improved Radiation Detectors,” Materials Letters, vol. 63, Jan. 2009, pp. 180-181.

26.    R.J. Nikolic, A.M. Conway, C.E. Reinhardt, R.T. Graff and T.F. Wang, N. Deo and C.L. Cheung, Invited, Pillar Structured Thermal Neutron Detectors, International Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing, China, October 20-23, 2008.

27.    R.J. Nikolic, A.M. Conway, C.E. Reinhardt, R.T. Graff and T.F. Wang, N. Deo and C.L. Cheung, "Pillar Structured Thermal Neutron Detector with 6:1 Aspect Ratio," Applied Physics Letters, vol. 93, issue 13, Sept. 2008, p. 133502.

28.    K.C. Mandal, A. Mertiri, et. al, “Layered III-VI Chalcogenide Semiconductor Crystals for Radiation Detectors,” Proceedings of the SPIE - The International Society for Optical Engineering, Hard X-Ray, Gamma-Ray and Neutron Detector Physics, August 11 2008, San Diego, CA, USA, 70790O (12 pp.)

29.    A.M. Conway, T.F. Wang, N. Deo, C.L. Cheung and R.J. Nikolic, "Numerical Simulations of Pillar Structured Solid State Thermal Neutron Detector Efficiency and Gamma Discrimination," IEEE Transactions on Nuclear Science (TNS),  vol. 56, no. 5, oct. 2009, pp. 2802-2807.

30.    A.M. Conway, R.J. Nikolic, and T.F. Wang, “Numerical Simulations of Carrier Transport in Pillar Structured Solid State Thermal Neutron Detector,” International Semiconductor Device Research Symposium ISDRS 2007, pp. 589-590, December 12-14, 2007, College Park, MD.

31.    R.J. Nikolic, A.M. Conway, T. Graff, C.E. Reinhardt, T.F. Wang, N. Deo and C.L.Cheung, “Fabrication of  Pillar-Structured Thermal Neutron Detectors,” IEEE Nuclear Science Symposium Conference Record,  IEEE , pp. 1577-1580, Honolulu, Hawaii, Oct. 2007.

32.    A.M. Conway, R.J. Nikolic, C.E. Reinhardt, K.J. Wu, S.J. Payne, K.C. Mandel, and A. Burger, “Exploration of GaTe for Gamma Detectors,”  IEEE Nuclear Science Symposium Conference Record,  IEEE, pp. 1551-1555, Honolulu, Hawaii, Oct. 2007.

33.    A.J. Nelson, A.M. Conway, C.E. Reinhardt, J. Ferreira, R.J. Nikolic, S.A. Payne, “Passivation of Semiconductor Surfaces for Improved Radiation Detector: X-Ray Photoemission Analysis,” Materials Research Symposium Digest, November 28-29, 2007, pp. 109-113.

34.    R.J. Nikolic, C.L. Cheung, C.E. Reinhardt, and T.F. Wang, Invited, “Future of Semiconductor Based Thermal Neutron Detectors,” Nanotech 2006, Boston, MA, May 2006.

35.    R.J. Nikolic, C.L. Cheung, C.E. Reinhardt, and T.F. Wang, Invited, “Roadmap for High Efficiency Solid-State Neutron Detectors,” SPIE-Int. Soc. Opt. Eng. Proceedings of the SPIE - The International Society for Optical Engineering, vol. 6013, no.1, 2005, pp. 36-44.

36.    C.D. Frye, S.O. Kucheyev, J.H. Edgar, L.F. Voss, A.M. Conway, Q. Shao, R.J. Nikolic, “Ni/Au contacts to B12P2,” Journal of Vacuum Science and Technology A, 33(3), 031101, 2015.

37.    L.F. Voss, A.M. Conway, C.E. Reinhardt, R.T. Graff, R.J. Nikolic, “Smooth Bosch Etch for Improved Si Devices,” IEEE Electron Device Letters, vol. X, no. Y, pp. 2013.

38.    L.F. Voss, C.E. Reinhardt, R.T. Graff, A.M. Conway, R.J. Nikolic, N. Deo, C.L. Cheung, "Etching of 10Boron with SF6-based Electron Cyclotron Resonance Plasmas for Pillar Structured Thermal Neutron Detectors", Journal of Electronic Materials, vol. 39, issue 3, pp. 263-267, 2010.

39.    L.F. Voss, Q. Shao, C.E. Reinhardt, R.T. Graff, A.M. Conway, R.J. Nikolic, N. Deo, C.L. Cheung, “Planarization of high aspect ratio p-i-n diode pillar arrays for blanket electrical contacts,” Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures) vol.  28, issue 5, pp. 916-20,  Sept. 2010.  

40.    L.F. Voss, C.E. Reinhardt, R.T. Graff, A.M. Conway, R.J. Nikolic, N. Deo, C.L. Cheung, “Comparison of CF4 and SF6 Plasmas for ECR Etching of Isotopically Enriched 10boron Films,” Nuclear Instruments and Methods in Physics Research A, vol. 606, 2009, pp. 821-823.

41.    N. Deo, J.R. Brewer, C.E. Reinhardt, R.J. Nikolic and C.L. Cheung, "Conformal Filling of Silicon Micro-Pillar Platform with 10Boron," Journal of Vacuum Science and Technology B, vol. 26, no. 4, July 2008, pp.1309-1314.

42.    C.L. Cheung, R.J. Nikolic, C.E. Reinhardt, and T.F. Wang, “Fabrication of nanopillars by nanosphere lithography,” Nanotechnology, vol. 17, March 2006, pp. 1339-1343.

43.    R.J. Welty, C.E. Reinhardt, I.Y. Han, Y.Du and S.J. Yoo, “Chlorine-Hydrogen ECR etching of InGaAsP/InP,” International Semiconductor Device Research Symposium, Washington DC, Dec. 10-12 2003, pp.422-423.

44.    R. W. Boyd, J.E. Heebner et. al, “Nanofabrication of optical structures and devices for photonics and biophotonics,” Journal of Modern Optics, vol. 50, no. 15-17, 2003, pp. 2543-2550.

45.    C.H. Yun, A.B. Wengrow, N.W. Cheung, Y. Zheng, R.J. Welty, Z.F. Guan, K.V. Smith, P.M. Asbeck, E.T. Yu, S.S. Lau, “Transfer of patterned ion-cut silicon layers,” Applied Physics Letters, vol. 73, no. 19, Nov. 1998, pp. 2772-2774.

46.    R.J. Welty, S.H. Park, K.-P.S. Dancil, M.J. Sailor, P.M. Asbeck, “Porous silicon technology for RF integrated circuit applications,” Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Ann Arbor, MI, Sept. 1998, pp. 160-163.

47.    C.H. Yun, A.B. Wengrow, N.W. Cheung, Y. Zheng, R.J. Welty, Z.F. Guan, K.V. Smith, P.M. Asbeck, E.T. Yu, S.S. Lau, “Ion-cut silicon layer transfer with patterned implantation of hydrogen,” International Symposium on Silicon-on Insulator Technology and Devices, Seattle, Washington, May 1999, pp. 125-130.

48.    R.J. Welty, S.H. Park, P.M. Asbeck, K.P.S. Dancil, M.J. Sailor, “Porous Silicon Technology for RF Integrated Circuit Applications,” Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Sept. 17-18 1998, Ann Arbor, MI, pp. 160-163

49.    C. Gonzalez, R.J. Welty, R.L. Smith, S.D. Collins, “Microjoinery for optomechanical systems,” Proceedings of the SPIE, San Jose, CA, Feb. 1997, pp. 171-178.

 Opto-electronics

50.    M.D. Pocha, L.L. Goddard, T.C. Bond, R.J. Nikolic, S.P. Vernon, J.S. Kallman, and E.M. Behymer, “Electrical and Optical Gain Lever Effects in InGaAs Double Quantum-Well Diode Lasers,” Front cover, IEEE Journal of Quantum Electronics, vol.43, no.10, 2007, pp. 860-868.

51.    C. Ji, R. G. Broeke, Y. Du, J. Cao, N. Chubun, P. Bjeletich, F. Olsson, S. Lourdudoss, R. Welty, C. Reinhardt, P. L. Stephan, and S. J. B. Yoo, "Monolithically integrated InP based photonic chip development for O-CDMA systems," IEEE Journal Selected Topics on Quantum Electronics, vol. 11, Jan./Feb. 2005, pp. 66-77.

52.    M. Pocha, T.C. Bond, R.J. Welty, S. Vernon, J. Kallman and E. Behymer, “Gain lever characterization in monolithically integrated diode lasers,” SPIE - International Symposium on Integrated Optoelectronic Devices, Photonics West,  Jan. 25 2005, San Jose, Ca, USA, vol. 5722, pp. 288-298.

53.    R.J. Welty, T.C. Bond, E. Behymer, M. Pocha, G. Loomis, J. Wolfe, and S. Vernon, “Integrated laser with low-loss high index-contrast waveguides for OEICs,” SPIE - International Symposium on Integrated Optoelectronic Devices, Photonics West,  Jan. 25 2005, San Jose, Ca, USA, vol. 5729, pp. 49-60.

54.    M.E. Lowry, C.V. Bennett, S.P. Vernon, T.C. Bond, R.J. Welty, E.M. Behymer et. al, “RadSensor: x-ray detection by direct modulation of an optical probe beam,”  SPIE-Int. Soc. Opt. Eng. Proceedings of Spie - the International Society for Optical Engineering, vol. 5194, no.1, 30 Jan. 2004, pp.193-204.

55.    C.W. Tu, Y.G. Hong, R. Andre, R.J. Welty, P.M. Asbeck, “Bandgap Engineering of GaInP on GaAs (001) for Electronic Applications,” International Conference on Indium Phosphide and Related Materials, May 31-June 4 2004, Kagoshima, Japan, pp. 631-635.

56.    R. G. Broeke, J. Cao, C. Ji, Y. Du, N. Chubun, P. Bjeletich, S. J. B. Yoo, R. Welty, P. L. Stephan, C. Reinhardt, I. Y. Han, N. P. Kobayashi, "A progammable monolithic InP optical-CDMA encoder/decoder," LEOS'04 Annual Meeting as an invited paper, Rio Grande, Puerto Rico, Nov. 7-11 2004, pp. 224-225.

57.    H.P. Xin, R.J. Welty, Y.G. Hong and C.W. Tu, “Gas-source MBE growth of Ga(In)NP/GaP structures and their applications for red light-emitting diodes,” Journal of Crystal Growth, vol.227-228, July 2001, pp.558-61.

58.    C.W. Tu, H.P. Xin, M. Sopanen and R.J. Welty, “Novel optoelectronic materials: GaInNAs and Ga(In)NP,”  IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (IEEE Annual Meeting Conference Proceedings), Rio Grande, Puerto Rico, 13-16 Nov. 2000, pp.784-5.

59.    H.P. Xin, R.J. Welty, C.W. Tu, “GaNP light-emitting diodes directly grown on GaP substrates,” Applied Physics Letters, vol. 77, no. 13, Sept. 2000, pp. 1946-1948.

60.    H.P. Xin, R.J. Welty, C.W. Tu, “GaNP/GaP double-heterostructure red light-emitting diodes directly grown on GaP substrates,” IEEE Photonics Technology Letters, vol. 12, no. 8, 2000, pp. 960-962.

 Heterojunction Transistors

61.    R.E. Welser, R.J. Welty, K.S. Stevens, B.E. Landini, P.M. Asbeck, S-C. Hung, W-P. Lu and S-C. Feng, “Impact of compositionally graded base regions on the DC and RF properties of reduced turn-on voltage InGaP/GaInAsN DHBTs,” IEEE Transaction of Electron Devices, vol. 51, no. 10, Oct. 2004, pp. 1545-1553.

62.    R.J. Welty, H.P. Xin, C.W. Tu and P.M. Asbeck, “Transport properties of GaInNAs HBTs with 2 % N,” Journal of Applied Physics, vol. 95, no. 1, Jan. 2004, pp.327-33.

63.    R.J. Welty, K. Mochizuki, C.R. Lutz, R. Welser and P.M. Asbeck, “Design and performance of tunnel collector HBTs for microwave power amplifiers,” IEEE Transaction of Electron Devices, vol.50, no.4, April 2003, pp.894-900.

64.    P.M. DeLuca, C.R. Lutz, R.E. Welser, T.Y. Chi, E.K. Huang, R.J. Welty and P.M. Asbeck, “Implementation of reduced turn-on voltage InGaP HBTs using graded GaInAsN base regions,” IEEE Electron Device Letters, vol.23, no.10,  Oct. 2002, pp. 582-4.

65.    D.M. Keogh, R.J. Welty, J.L. Gonzalez, C.R. Lutz, R.E. Welser and P.M. Asbeck, “GaInP/GaAs tunnel collector HBTs: base-collector barrier height analysis,” IEEE Lester Eastman Conference on High Performance Devices, Newark, Delaware, Aug. 2002, pp. 358-363.

66.    P.M. Asbeck, R.J. Welty, C.W. Tu, H.P. Xin and R.E. Welser, “Heterojunction bipolar transistors implemented with GaInNAs materials,” Semiconductor Science and Technology, vol.17, no.8, Aug. 2002, pp. 898-906.

67.    R.J. Welty, H.P. Xin, K. Mochizuki, C.W. Tu and P.M. Asbeck, “GaAs/GaInNAs/GaAs NpN double heterojunction bipolar transistor with low turn-on voltage,” Solid State Electronics, vol. 46, no. 1, pp. 1-5, 2002.

68.    R.J. Welty, K. Mochizuki, C.R. Lutz, and P.M. Asbeck, “Tunnel collector HBTs for microwave power amplifiers,” IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, Sept. 30 - Oct. 2 2001, pp. 74 - 77.

69.    R.J. Welty, H.P. Xin, C.W. Tu, and P.M. Asbeck, “GaInNAs-Base NpN DHBTs grown by GS-MBE with 2% nitrogen,” State-of-the-Art Program on Compound Semiconductors (Electrochemical Society Proceedings), San Francisco, California, Sept. 2001, pp. 52-61.

70.    R.E. Welser, P.M. DeLuca, B.E. Landini, M. Chaplin, K.S. Stevens, T.L. Brenner, R.J. Welty, P.M. Asbeck, A. Ikhlassi, J.C. Li and R.L. Pierson, “Pathway for HBT turn-on voltage reduction on a GaAs platform,” International Conference on Gallium-Arsenide Manufacturing Technology, Las Vegas, Nevada, May 2001, pp.30-33.

71.    K. Mochizuki, R.J. Welty, P.M. Asbeck, C.R. Lutz, R.E. Welser, S.J. Whitney and N. Pan, “GaInP/GaAs C-Up TC-HBTs: optimization of fabrication process and epitaxial layer structure for high-efficiency high power amplifiers,” IEEE Transactions on Electron Devices, vol. 47, no. 12, Dec. 2000, pp. 2277-2283.

72.    R.J. Welty, Y.G. Hong, H.P. Xin, K. Mochizuki, C.W. Tu, P.M. Asbeck, “Nitrogen incorporation in GaInP for novel HBTs,” IEEE Cornell Conference on Advanced Concepts in High Performance Devices, Ithaca, New York, Aug. 2000, pp. 33-40.

73.    R.J. Welty, H.P. Xin, K. Mochizuki, C.W.  Tu, P.M. Asbeck, “Design and characterization of GaInNAs based DHBTs,” Device Research Conference, Denver, Colorado, June 2000, pp. 145-155.

74.    K. Mochizuki, R.J. Welty, P.M. Asbeck, C.R. Lutz, R.E. Welser, S.J. Whitney, N. Pan, “Zero-offset low-knee-voltage GaInP/GaAs C-up TC-HBT for high-efficiency high power amplifiers,” International Conference on Gallium-Arsenide Manufacturing Technology, Washington D.C., May 1-4 2000, pp. 169-172.

75.    K. Mochizuki, R.J. Welty, P.M. Asbeck, “GaInP/GaAs C-up TC-HBT with zero-offset and low-knee-voltage characteristics,” Electronics Letters, vol. 3, no. 3, Feb. 2000, pp. 264-265.

76.    P.F. Chen, Y.T. Hsin, R.J. Welty, P.M. Asbeck, R.L. Pierson, P.J. Zampardi, W.-J. Ho, M.C.V. Ho, M.F. Chang, “Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications,” IEEE Transactions on Microwave Theory and Techniques, vol. 47, no. 8, Aug. 1999, pp. 1433-1438.

77.    X.Z. Dang, R.J. Welty, D. Qiao, P.M. Asbeck, S.S. Lau, E.T. Yu, K.S. Boutros, J.M. Redwing, “Fabrication and characterization of enhanced barrier AlGaN/GaN HFET,” Electronics Letters, vol. 35, no. 7, April 1999, pp. 602-603.

 

• R&D 100 Award, 2021
• DOE Oppenheimer Fellow, 2018
• LLNL Early and Mid-Career Award, 2017
• Fellow at the Scowcroft Institute at Texas A&M University, 2016
• LLNL Global Security Silver Award, In recognition of your exemplary performance of going above and beyond the duty of a Principal Investigator for the Vertical GaN Project, 2016
• LLNL Global Security Directorate Gold Award, In recognition of outstanding work on the TlBr Semiconductor Device, 2012
• NNSA LDRD Symposium, Best Poster Award, 2010
• LLNL Global Security Directorate Award for Developing Stronger Materials Detection Portfolio, 2008