WPD Bronze Award for Bounding Pu Properties Team, 2019
Defense Programs Award of Excellence for LEP Replacement Material Team, 2018
Defense Programs Award of Excellence for Pu Aging Science Team, 2017
Defense Programs Award of Excellence for Modern Low-Z EOS Delivery Team, 2014
Defense Programs Award of Excellence for Multiphase EOS Team, 2010
Defense Programs Award of Excellence for Pit Lifetime Team, 2007
Outstanding Meeting Paper at the Materials Research Society Fall Meeting, 2006
John Klepeis is a theoretical and computational condensed matter physicist and Group Leader of the Equation of State (EOS) and Materials Theory Group in the Physics Division of the Physical and Life Sciences Directorate at LLNL, where he has been since 1989. He received his B.S. degree from the School of Applied and Engineering Physics at Cornell University in 1985. His graduate work was carried out in the Department of Applied Physics at Stanford University under Professor Walter A. Harrison. He obtained his M.S. degree in 1987 and his Ph.D. in 1989. At Stanford John studied Coulomb effects in semiconductor systems using self-consistent tight-binding electronic structure calculations. In particular, he applied this methodology to dopants in semiconductors, semiconductor heterojunctions, and metal-semiconductor interfaces. His thesis, entitled, Self-consistent electronic structure of semiconductor systems, shed light on the underlying principles that determine the valence band offset in heterojunctions and the Schottky barrier in metal-semiconductor contacts.